The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Feb. 04, 2015
Globalfoundries Inc., Grand Cayman, KY;
Brent A. Anderson, Jericho, VT (US);
Andres Bryant, Burlington, VT (US);
Edward J. Nowak, Essex Junction, VT (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method of single-fin removal for quadruple density fins. A first double density pattern of first sidewall spacers is produced on a semiconductor substrate from first mandrels formed by a first mask using a minimum pitch. A second double density pattern of second sidewall spacers is produced on a layer disposed above the first double density pattern from second mandrels formed by a second mask with a the minimum pitch that is shifted relative to the first mask. A single sidewall spacer is removed from either the first or second double density pattern of first and second sidewall spacers. Sidewall image transfer processes allow the formation of quadruple density fins from which but a single fin is removed.