The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Oct. 15, 2014
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Andres Bryant, Burlington, VT (US);
Brian J. Greene, Wappingers Falls, NY (US);
Jeffrey B. Johnson, Essex Junction, VT (US);
Mickey H. Yu, Essex Junction, VT (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/02532 (2013.01); H01L 21/845 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01);
Abstract
Merged fin structures for finFET devices and methods of manufacture are disclosed. The method of forming the structure includes forming a plurality of fin structures on an insulator layer. The method further includes forming a faceted structure on adjacent fin structures of the plurality of fin structures. The method further includes spanning a gap between the faceted structures on the adjacent fin structures with a semiconductor material.