Company Filing History:

10 out of 5,671

Globalfoundries Inc.

patents

5 out of 164,108

International Business Machines Corporation

patents

4 out of 927

Globalfoundries U.S. Inc.

patents

4. 1 out of 58

Toshiba America Electronic Components, Inc.

patents

where one patent can have more than one assignee

Years Active: 2000-2023

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19 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11791626 - Electrostatic discharge clamp structures (2023-10-17),

2. 11637173 - Structure including polycrystalline resistor with dopant-including polycrystalline region thereunder (2023-04-25),

3. 11444149 - Polysilicon resistor with continuous u-shaped polysilicon resistor elements and related method (2022-09-13),

4. 11201466 - Electrostatic discharge clamp structures (2021-12-14),

5. 10741685 - Semiconductor devices having a fin channel arranged between source and drift regions and methods of manufacturing the same (2020-08-11),

6. 10692852 - Silicon-controlled rectifiers with wells laterally isolated by trench isolation regions (2020-06-23),

7. 10636872 - Apparatus and method to prevent integrated circuit from entering latch-up mode (2020-04-28),

8. 10541236 - Electrostatic discharge devices with reduced capacitance (2020-01-21),

9. 10361293 - Vertical fin-type devices and methods (2019-07-23),

10. 10290626 - High voltage electrostatic discharge (ESD) bipolar integrated in a vertical field-effect transistor (VFET) technology and method for producing the same (2019-05-14),

11. 10096587 - Fin-based diode structures with a realigned feature layout (2018-10-09),

12. 10008491 - Low capacitance electrostatic discharge (ESD) devices (2018-06-26),

13. 9818873 - Forming stressed epitaxial layers between gates separated by different pitches (2017-11-14),

14. 9431399 - Method for forming merged contact for semiconductor device (2016-08-30),

15. 9312274 - Merged fin structures for finFET devices (2016-04-12),

Title: Innovations by Mickey H Yu

Introduction

Mickey H Yu is an accomplished inventor based in Essex Junction, Vermont, with a remarkable portfolio of 19 patents. His contributions to the field of technology and engineering have made a significant impact, especially in the realm of semiconductor devices and circuit structures.

Latest Patents

Mickey's latest innovations include advanced electrostatic discharge clamp structures. This invention features a circuit structure that integrates a network of clamps, sense elements that detect the activation of at least one clamp, and feedback elements designed to trigger the remaining clamps. This innovative design enhances the efficiency and reliability of electronic circuits. Another notable patent involves a structure that includes a polycrystalline resistor with a dopant-including polycrystalline region beneath it. This invention consists of a semiconductor substrate and a polycrystalline resistor region engineered with specific semiconductor materials and dopants to optimize performance.

Career Highlights

Throughout his career, Mickey has collaborated with some of the leading companies in the technology sector. He has worked at GlobalFoundries Inc. and the International Business Machines Corporation (IBM), where he contributed his expertise to various projects and innovations. His work has been instrumental in developing cutting-edge technologies that have advanced semiconductor design and manufacturing.

Collaborations

Mickey has also collaborated with notable professionals in the industry, including Alain F. Loiseau and You Li. These partnerships have fostered an environment of creativity and innovation, leading to the development of various technological advancements that continue to shape the industry.

Conclusion

Mickey H Yu's innovative mindset and dedication to advancing technology are evident in his numerous patents and collaborations. As he continues to contribute to the field of semiconductor technology, his work serves as an inspiration for aspiring inventors and engineers. Mickey's achievements highlight the importance of innovation and the impact it has on the technological landscape.

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