The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Oct. 31, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Shunhua T. Chang, South Burlington, VT (US);

Ephrem G. Gebreselasie, South Burlington, VT (US);

Mujahid Muhammad, Essex Junction, VT (US);

Xiangxiang Lu, Essex Junction, VT (US);

Mickey H. Yu, Essex Junction, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 27/06 (2006.01); H01L 29/872 (2006.01); H01L 23/528 (2006.01); G09G 3/32 (2016.01);
U.S. Cl.
CPC ...
H01L 29/0684 (2013.01); H01L 23/528 (2013.01); H01L 27/0629 (2013.01); H01L 29/0649 (2013.01); H01L 29/1095 (2013.01); H01L 29/872 (2013.01); G09G 3/32 (2013.01); G09G 2330/04 (2013.01);
Abstract

The disclosure provides an apparatus for preventing an integrated circuit (IC) structure from entering a latch-up mode. In an embodiment, the apparatus may include: a p-type substrate; an n-well within the p-type substrate; an n-type region within the p-type substrate, the n-type region being distinct from the n-well; a p-type region within the n-well; a power supply electrically coupled to the p-type region within the n-well; and a directional diode electrically coupling the power supply to the n-well in parallel with the p-type region. The directional diode biases a current flow from the power supply to the n-well, and the directional diode contacts the n-well distal to the p-type region.


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