The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Sep. 21, 2018
Globalfoundries Inc., Grand Cayman, KY;
Robert Gauthier, Jr., Williston, VT (US);
Souvick Mitra, Essex Junction, VT (US);
Alain Loiseau, Williston, VT (US);
Tsai Tsung-Che, Essex Junction, VT (US);
Mickey Yu, Essex Junction, VT (US);
You Li, South Burlington, VT (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Structures for laterally-diffused metal-oxide-semiconductor devices and drain-extended metal-oxide-semiconductor devices, as well as methods of forming laterally-diffused metal-oxide-semiconductor devices and drain-extended metal-oxide-semiconductor devices. A gate electrode is arranged to extend about a semiconductor fin projecting from a substrate. A drain region is arranged in the substrate, and a source region is coupled with the semiconductor fin. The source region is arranged over the semiconductor fin. A drift region is arranged in the substrate between the drain region and the semiconductor fin. The drain region, source region, and drift region have a given conductivity type. The drift region has a lower electrical conductivity than the drain region.