Williston, VT, United States of America

Alain F Loiseau

USPTO Granted Patents = 87 

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 174(Granted Patents)

Forward Citations (Not Self Cited) = 163(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:


Years Active: 2002-2025

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Areas of Expertise:
Electrostatic Discharge Devices
Integrated Circuit Structures
Silicon Controlled Rectifiers
Bipolar Transistors
Electrically Programmable Fuses
Fin-Based Devices
Voltage Triggered Rectifiers
Diode Triggered SCRs
Cognitive Vision Remediation
High Voltage ESD Protection
Laterally Diffused MOS Devices
Power Spike Resistant Clamps
87 patents (USPTO):Explore Patents

Title: The Innovative Journey of Alain F. Loiseau

Introduction: Alain F. Loiseau, a prolific inventor based in Williston, Vermont, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 82 patents, he has been instrumental in developing cutting-edge innovations that enhance the performance and efficiency of integrated circuits.

Latest Patents: Among his latest patents is an integrated circuit structure featuring a diode over a lateral bipolar transistor. This innovative structure includes a lateral bipolar transistor within a monocrystalline semiconductor situated over a substrate, an insulator layer positioned over part of the monocrystalline semiconductor, and a polycrystalline semiconductor diode on the insulator layer. Notably, the cathode of the diode is connected to a first well within the monocrystalline semiconductor that defines an emitter terminal or collector terminal for the lateral bipolar transistor. Additionally, Loiseau's recent work on fin-based and bipolar electrostatic discharge (ESD) devices showcases his expertise in semiconductor structures. This ESD device comprises a bipolar transistor, a collector region, an emitter region, and a lateral ballasting resistance made of semiconductor material adjacent to the collector region.

Career Highlights: Alain has held notable positions at leading technology companies. He worked with IBM, where his contributions significantly advanced the company’s semiconductor capabilities. Later, his expertise led him to Globalfoundries U.S. Inc., where he continued to innovate in the field, bridging the gap between design and manufacturing of semiconductor technologies.

Collaborations: Throughout his career, Loiseau has had the privilege of working alongside talented individuals like Souvick Mitra and Robert J. Gauthier, Jr. These collaborations have fostered an environment of creativity and innovation, resulting in advancements that push the boundaries of semiconductor technology.

Conclusion: Alain F. Loiseau's impactful work in the semiconductor industry is marked by his substantial patent portfolio and his collaborations with leading professionals. His innovative spirit continues to drive the evolution of integrated circuit technology, solidifying his reputation as a pioneer in the field.

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