The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Aug. 18, 2022
Globalfoundries U.s. Inc., Malta, NY (US);
Anindya Nath, Essex Junction, VT (US);
Alain F. Loiseau, Williston, VT (US);
Souvick Mitra, Essex Junction, VT (US);
Rajendran Krishnasamy, Essex Jucntion, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Embodiments of the disclosure provide an integrated circuit (IC) structure with a diode over a lateral bipolar transistor. A structure according to the disclosure may include a lateral bipolar transistor within a monocrystalline semiconductor over a substrate. An insulator layer is over a portion of the monocrystalline semiconductor. A diode is within a polycrystalline semiconductor on the insulator layer. A cathode of the diode is coupled to a first well within the monocrystalline semiconductor. The first well defines one of an emitter terminal and a collector terminal of the lateral bipolar transistor.