Essex Junction, VT, United States of America

Rajendran Krishnasamy

This inventor holds 76 USPTO granted patents and 24 published patent applications and 3 EPO patents, primarily in Semiconductor Devices. Top assignees: Globalfoundries U.S. Inc., International Business Machines Corporation, Infineon Technologies Ag. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rajendran Krishnasamy. Retrieved from https://idiyas.com/inventor/rajendran-krishnasamy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 76 

% Patents Active = 69.7

 

Average Co-Inventor Count = 3.7

ph-index = 5

Forward Citations = 91(Granted Patents)

Forward Citations (Not Self Cited) = 75(Dec 10, 2025)


Location History:

  • Junction, VT (US) (2010)
  • Essex Juction, VT (US) (2012)
  • Essex Junction, NY (US) (2008 - 2013)
  • Essex Junction, VT (US) (2006 - 2024)

Company Filing History:


Years Active: 2006-2026

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Areas of Expertise:
Transistor
High Electron Mobility
Electrostatic Discharge
Integrated Circuit
Photodetector
Bipolar Junction
Field-Effect Transistor
Heterojunction
Avalanche Photodiode
E-Fuse
Silicon Controlled Rectifier
76 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Rajendran Krishnasamy in Semiconductor Technology

Introduction: Rajendran Krishnasamy is a prominent inventor based in Essex Junction, Vermont, with an impressive portfolio of 52 patents. His work primarily focuses on semiconductor structures, particularly in the realm of heterojunction bipolar transistors and field-effect transistors.

Latest Patents: Among his most recent patents is the invention of a heterojunction bipolar transistor that incorporates amorphous semiconductor regions. This innovation is significant in enhancing semiconductor structures, providing a buried trap-rich region, and improving the overall methods of manufacturing these devices. Another notable patent details semiconductor structures that include electrical isolation. The design features a semiconductor substrate with defined recesses, ensuring optimal functionality of the active device regions.

Career Highlights: Rajendran has had a remarkable career, contributing to several high-profile companies in the semiconductor industry. He has worked with IBM, where he played a crucial role in advancing technologies and developing innovative solutions. Additionally, he was part of Globalfoundries U.S. Inc., further enhancing his expertise and influence in semiconductor innovations.

Collaborations: Throughout his career, Rajendran has collaborated with esteemed colleagues such as John J. Ellis-Monaghan and Kathryn Turner Schonenberg. These collaborations have fostered a productive exchange of ideas that has significantly contributed to the field of semiconductor technology.

Conclusion: Rajendran Krishnasamy's contributions to the semiconductor industry are notable through his numerous patents and significant collaborations. His innovations in heterojunction bipolar transistors and field-effect transistors have paved the way for advancements in semiconductor technology, showcasing his vital role as an inventor in this rapidly evolving field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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