The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Feb. 21, 2023
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Shesh Mani Pandey, Saratoga Springs, NY (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
Chung Foong Tan, Ballston Spa, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc, Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/60 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H10D 30/605 (2025.01); H10D 30/0221 (2025.01); H10D 30/603 (2025.01); H10D 30/608 (2025.01); H10D 62/116 (2025.01); H10D 64/667 (2025.01); H10D 64/671 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a device with workfunction metal in a drift region and methods of manufacture. The structure includes: a gate structure having at least a first workfunction metal in a channel region and a second workfunction metal, which is different from the first workfunction metal, in a trench in a drift region; and a sidewall spacer adjacent to the gate structure within the trench in the drift region.