The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Dec. 22, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Sagar Premnath Karalkar, Essex Junction, VT (US);

Ephrem Gebreselasie, South Burlington, VT (US);

Rajendran Krishnasamy, Essex Junction, VT (US);

Robert J. Gauthier, Jr., Williston, VT (US);

Souvick Mitra, Essex Junction, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); H01L 21/762 (2006.01); H01L 23/60 (2006.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 89/713 (2025.01); H01L 21/76224 (2013.01);
Abstract

Structures for an electrostatic discharge protection device and methods of forming same. The structure comprises a first well and a second well in the semiconductor substrate. The first and second wells have a first conductivity type. The structure further comprises a third well and a fourth well in the semiconductor substrate. The third and fourth wells have a second conductivity type, the third well includes a portion that overlaps with the first well, and the fourth well includes a portion that overlaps with the second well.


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