The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Apr. 13, 2023
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Anindya Nath, Essex Junction, VT (US);

Rajendran Krishnasamy, Essex Junction, VT (US);

Souvick Mitra, Essex Junction, VT (US);

Steven M. Shank, Jericho, VT (US);

Sagar P. Karalkar, Singapore, SG;

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); H10D 8/60 (2025.01);
U.S. Cl.
CPC ...
H10D 89/713 (2025.01); H10D 8/605 (2025.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to silicon control rectifiers and methods of manufacture. A structure includes: a first well in a semiconductor substrate; a second well in the semiconductor substrate, adjacent to the first well; a plurality of shallow trench isolation structures extending into the first well and the second well; and at least one gate structure in the first well which abuts one shallow trench isolation structure of the plurality of shallow trench isolation structures.


Find Patent Forward Citations

Nath, Anindya. (2026). Silicon controlled rectifiers (U.S. Patent No. 12604532). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12604532

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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