The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Aug. 19, 2022
Globalfoundries U.s. Inc., Malta, NY (US);
Siva P. Adusumilli, South Burlington, VT (US);
Ramsey Hazbun, Colchester, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
A photodetector structure includes a first semiconductor material layer over a doped well in a substrate. The photodetector structure includes an air gap vertically between the first semiconductor material layer and a first portion of the doped well. The photodetector structure includes an insulative collar on the first portion of the doped well and laterally surrounding the air gap. The photodetector structure may include a second semiconductor material layer on the first portion of the doped well and laterally surrounded by the insulative collar. The photodetector structure may include a third semiconductor layer over the first semiconductor layer.