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For the Inventor, By the Inventor

Colchester, VT, United States of America

Ramsey M Hazbun

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This inventor holds 28 USPTO granted patents and 10 published patent applications and 1 EPO patent, primarily in Semiconductor Technology. Top assignee: Globalfoundries U.S. Inc.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ramsey M Hazbun. Retrieved from https://idiyas.com/inventor/ramsey-m-hazbun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.5

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:

goldMedal28 out of 1,090 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2021-2026

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Areas of Expertise:
Compound Semiconductor
Microfluidic Channels
Photodetector Structure
High Mobility Transistors
Integrated Circuit
Thermal Management
Avalanche Photodiode
Heterojunction Bipolar Transistors
Fluid Sensor
Substrate Structures
Transistor Design
Epitaxial Growth
28 patents (USPTO):Explore Patents
1. 12751327 - Stress-reduction structures for a compound semiconductor layer stack (2026-09-29),
2. 12521714 - Microfluidic channels in a substrate with a surface covered by a layer stack (2026-01-13),
3. 12491511 - Microfluidic channel structure and method (2025-12-09),
4. 12457823 - Photodetector structure with air gap and related methods (2025-10-28),
5. 12400927 - High-mobility-electron transistors having heat dissipating structures (2025-08-26),
6. 12362172 - Integration of compound-semiconductor-based devices and silicon-based devices (2025-07-15),
7. 12349500 - Photodiode with insulator layer along intrinsic region sidewall (2025-07-01),
8. 12342626 - Switches in bulk substrate (2025-06-24),
9. 12342555 - Bipolar transistor (2025-06-24),
10. 12317562 - High electron mobility transistors having barrier liners and integration schemes (2025-05-27),
11. 12310124 - Photodiodes (2025-05-20),
12. 12281996 - Semiconductor structure including photodiode-based fluid sensor and methods (2025-04-21),
13. 12131904 - Semiconductor structure with semiconductor-on-insulator region and method (2024-10-29),
14. 12062574 - Integrated circuit structure with through-metal through-substrate interconnect and method (2024-08-13),
15. 12040252 - Microfluidic channels sealed with directionally-grown plugs (2024-07-16),

Title: Innovations by Ramsey M Hazbun in High Electron Mobility Transistors and Photodiodes

Introduction

Ramsey M Hazbun is an accomplished inventor based in Colchester, Vermont, USA, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 19 patents, his groundbreaking work in high electron mobility transistors and photodiodes has advanced the industry.

Latest Patents

Among his latest patents, Hazbun has developed a high electron mobility transistor (HEMT) structure, which includes a channel layer and a barrier layer with innovative integration schemes. The design optimizes transistor performance by featuring a first barrier liner that is positioned lower than the top surface of the channel layer. This advancement aims to enhance the efficiency and functionality of HEMTs, which are crucial in high-frequency applications. Another notable invention by Hazbun involves photodiodes. This patent addresses semiconductor structures that include an intrinsic material sandwiched between terminals made of P-type and fully depleted N-type semiconductor materials. This configuration is engineered to improve the performance and manufacturing methods of photodiodes, showing Hazbun's dedication to pushing the limits of semiconductor technology.

Career Highlights

Ramsey M Hazbun currently works at GlobalFoundries U.S. Inc., a leading semiconductor manufacturer renowned for its innovation and advanced manufacturing techniques. His role at the company has played a critical part in driving forward the research and development of cutting-edge technologies in the semiconductor field.

Collaborations

Hazbun collaborates with other distinguished professionals in his field, including Siva P Adusumilli and John J Ellis-Monaghan. These partnerships not only enhance the innovation process but also contribute to the rich knowledge exchange within the research community, furthering advancements in semiconductor technologies.

Conclusion

In summary, Ramsey M Hazbun's extensive patent portfolio and his work at GlobalFoundries U.S. Inc. exemplify his commitment to innovation in semiconductor technology. His contributions to high electron mobility transistors and photodiodes showcase his expertise and dedication to advancing this critical field, ensuring that he remains a prominent figure among contemporary inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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