The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Jul. 06, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Ramsey Hazbun, Colchester, VT (US);

Cameron Luce, Colchester, VT (US);

Siva P. Adusumilli, South Burlington, VT (US);

Mark Levy, Williston, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/473 (2006.01); H01L 21/762 (2006.01); H01L 23/367 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 23/473 (2013.01); H01L 21/76229 (2013.01); H01L 23/367 (2013.01); H01L 29/515 (2013.01);
Abstract

Structures for a microfluidic channel and methods of forming a structure for a microfluidic channel. The structure comprises a trench in a semiconductor substrate and a semiconductor layer inside the trench. The trench has an entrance and a sidewall extending from the entrance into the semiconductor substrate. The semiconductor layer has a first portion surrounding a portion of the trench to define a cavity and a second portion positioned to obstruct the entrance to the trench. The second portion of the semiconductor layer is thicker than the first portion of the semiconductor layer.


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