The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Feb. 01, 2023
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Mark D. Levy, Williston, VT (US);

Siva P. Adusumilli, South Burlington, VT (US);

Alvin J. Joseph, Williston, VT (US);

Ramsey Hazbun, Colchester, VT (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/762 (2006.01); H01L 23/66 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 87/00 (2025.01);
U.S. Cl.
CPC ...
H10D 87/00 (2025.01); H01L 21/76283 (2013.01); H01L 23/66 (2013.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01); H01L 2223/6605 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to switches in a bulk substrate and methods of manufacture. The structure includes: at least one active device having a channel region of a first semiconductor material; a single air gap under the channel region of the at least one active device; and a second semiconductor material being coplanar with and laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the first semiconductor material.


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