Williston, VT, United States of America

Alvin Jose Joseph

This inventor holds 147 USPTO granted patents and 7 published patent applications and 3 EPO patents, primarily in Semiconductor Structures (CPC class H01L29-0649). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Globalfoundries U.S. Inc.. Active years: 2004-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Alvin Jose Joseph. Retrieved from https://idiyas.com/inventor/alvin-jose-joseph

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 147 

% Patents Active = 70.1


Average Co-Inventor Count = 4.2

ph-index = 14

Forward Citations = 653(Granted Patents)

Forward Citations (Not Self Cited) = 568(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Willliston, VT (US) (2011 - 2013)
  • Essex Junction, VT (US) (2011 - 2014)
  • Williston, VT (US) (2004 - 2024)

Company Filing History:


Years Active: 2004-2026

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Areas of Expertise:
Compound-Semiconductor Devices
Bipolar Transistor
Photodetector
Field-Effect Transistor
Thermal Shunt
Integrated Circuit
Substrate Biasing
Airgap Technology
Hybrid Cascode
Epitaxial Growth
Chip Package
Isolation Trenches
147 patents (USPTO):Explore Patents

Title: Alvin Jose Joseph: Pioneering Innovator in Semiconductors

Introduction:

In the realm of semiconductors and device structures, Alvin Jose Joseph, a highly accomplished inventor and engineer, has made significant contributions. With a whopping number of 136 patents under his belt, Joseph has continuously pushed the boundaries of technological advancements. This article delves into his latest patents, career highlights, collaborations, and acknowledges his role as a pioneering innovator in the field.

Latest Patents:

Joseph's recent patents showcase his expertise in field-effect transistors (FETs) and semiconductor device structures:

1. Field-effect transistors with a body pedestal: This patent involves the formation of a trench isolation region in a substrate, which surrounds a semiconductor body. Additionally, an undercut cavity region is created beneath the semiconductor body, defining a body pedestal. These innovative structures offer enhanced performance and integration capabilities for FETs.

2. Semiconductor device structures with a substrate biasing scheme: Joseph's invention encompasses semiconductor device structures featuring substrate biasing. By coupling a substrate contact to a portion of a bulk semiconductor substrate in a device region and applying a negative bias voltage, the field-effect transistor's semiconductor body becomes electrically isolated. This innovation contributes to improved device operation and performance.

Career Highlights:

Throughout his career, Alvin Jose Joseph has worked with esteemed organizations, including International Business Machines Corporation (IBM) and GlobalFoundries Inc. These companies are renowned in the semiconductor industry, and Joseph's contributions have undoubtedly played a crucial role in their success. His inventive mindset and expertise have fueled breakthroughs in semiconductor technologies employed by these organizations.

Collaborations:

Alvin Jose Joseph's innovative journey hasn't been solitary. He has collaborated with talented individuals, including Qizhi Liu and Alan Bernard Botula. Their collective efforts have resulted in remarkable advancements within the semiconductor domain, strengthening the pace of technological progress.

Conclusion:

Alvin Jose Joseph's prolific career as an inventor and engineer in the field of semiconductors is awe-inspiring. With 136 patents to his name, his contributions have significantly impacted the industry. Joseph's latest patents in field-effect transistors and semiconductor device structures demonstrate his ingenious problem-solving abilities and commitment to pushing technological boundaries. As he continues to collaborate with talented individuals and contribute to the growth of the semiconductor field, the future looks promising for innovation and advancements under Joseph's expertise.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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