The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
May. 02, 2017
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Michel J. Abou-Khalil, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
Alvin J. Joseph, Williston, VT (US);
Michael J. Zierak, Colchester, VT (US);
Assignee:
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 21/265 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02667 (2013.01); H01L 21/26506 (2013.01); H01L 21/76224 (2013.01); H01L 29/04 (2013.01); H01L 29/0649 (2013.01); H01L 29/0688 (2013.01); H01L 29/1079 (2013.01); H01L 29/1095 (2013.01); H01L 29/16 (2013.01); H01L 29/78 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01);
Abstract
Device structures for a field-effect transistor and methods of forming a device structure for a field-effect transistor. A trench isolation region is formed in a substrate, and surrounds a semiconductor body. An undercut cavity region is also formed in the substrate. The undercut cavity region extends laterally beneath the semiconductor body and defines a body pedestal as a section of the substrate that is arranged in vertical alignment with the semiconductor body.