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Essex Junction, VT, United States of America

Michel J Abou-Khalil

USPTO Granted Patents = 56 


Average Co-Inventor Count = 4.9

ph-index = 7

Forward Citations = 369(Granted Patents)

DiyaCoin DiyaCoin = 0.62 


Inventors with similar research interests:


Location History:

  • Essex Junction, NY (US) (2022)
  • Essex Junction, VT (US) (2010 - 2023)

Company Filing History:

goldMedal33 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal13 out of 927 
 
Globalfoundries U.S. Inc.
 patents
bronzeMedal9 out of 5,671 
 
Globalfoundries Inc.
 patents
4. 1 out of 51 
 
Elpis Technologies Inc.
 patents

Years Active: 2010-2025

where 'Filed Patents' based on already Granted Patents

56 patents (USPTO):
1. 12400927 - High-mobility-electron transistors having heat dissipating structures (2025-08-26),
2. 12230673 - Field-effect transistors having a gate electrode positioned inside a substrate recess (2025-02-18),
3. 11848324 - Efuse inside and gate structure on triple-well region (2023-12-19),
4. 11764060 - Field-effect transistors with a body pedestal (2023-09-19),
5. 11728348 - Vertically stacked field effect transistors (2023-08-15),
6. 11658177 - Semiconductor device structures with a substrate biasing scheme (2023-05-23),
7. 11437522 - Field-effect transistors with a polycrystalline body in a shallow trench isolation region (2022-09-06),
8. 11411087 - Integrated circuit (IC) structure with high impedance semiconductor material between substrate and transistor (2022-08-09),
9. 11322357 - Buried damage layers for electrical isolation (2022-05-03),
10. 11315825 - Semiconductor structures including stacked depleted and high resistivity regions (2022-04-26),
11. 11205701 - Transistors with sectioned extension regions (2021-12-21),
12. 11183514 - Vertically stacked field effect transistors (2021-11-23),
13. 11158535 - Multi-depth regions of high resistivity in a semiconductor substrate (2021-10-26),
14. 10818763 - Field-effect transistors with laterally-serpentine gates (2020-10-27),
15. 10755949 - Structures, methods and applications for electrical pulse anneal processes (2020-08-25),

As an AI assistant at iDiyas.com, I am here to provide information about inventor Michel J Abou-Khalil.

Title: Inventor Spotlight - Michel J Abou-Khalil

Introduction:

Michel J Abou-Khalil, a prolific inventor based in Essex Junction, VT (US), is known for his impressive portfolio of 54 patents in the field of semiconductor technology.

Latest Patents:

1. "Efuse inside and gate structure on triple-well region" - This patent focuses on semiconductor structures, specifically an eFuse and gate structure on a triple-well, along with methods of manufacture.

2. "Field-effect transistors with a body pedestal" - This patent introduces device structures for a field-effect transistor, highlighting the formation of a trench isolation region and an undercut cavity region in the substrate.

Career Highlights:

Abou-Khalil has made significant contributions during his tenure at companies like IBM (International Business Machines Corporation) and Globalfoundries Inc., where his expertise in semiconductor technology has been instrumental in driving innovation.

Collaborations:

Throughout his career, Abou-Khalil has collaborated with notable individuals in the industry, including Robert J Gauthier, Jr, and JunJun Li, further advancing the field of semiconductor technology through collective expertise and innovative ideas.

Conclusion:

In conclusion, Michel J Abou-Khalil's dedication to semiconductor innovation is evident through his extensive patent portfolio and successful collaborations in the industry. His contributions have undoubtedly left a lasting impact on technological advancements in the field.

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