The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Sep. 05, 2019
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Anthony K. Stamper, Burlington, VT (US);

Steven M. Shank, Jericho, VT (US);

Siva P. Adusumilli, Burlington, VT (US);

Michel J. Abou-Khalil, Essex Junction, VT (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 27/12 (2006.01); H01L 27/02 (2006.01); H01L 29/16 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/84 (2006.01); H01L 21/3065 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/02532 (2013.01); H01L 21/3065 (2013.01); H01L 21/31111 (2013.01); H01L 21/7624 (2013.01); H01L 21/84 (2013.01); H01L 27/0207 (2013.01); H01L 29/0847 (2013.01); H01L 29/1087 (2013.01); H01L 29/16 (2013.01); H01L 29/401 (2013.01); H01L 29/41758 (2013.01); H01L 29/665 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to vertically stacked field effect transistors and methods of manufacture. The structure includes: at least one lower gate structure on a bottom of a trench formed in substrate material; insulator material partially filling trench and over the at least one lower gate structure; an epitaxial material on the insulator material and isolated from sidewalls of the trench; and at least one upper gate structure stacked vertically above the at least one lower gate structure and located on the epitaxial material.


Find Patent Forward Citations

Loading…