The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Mar. 30, 2022
Globalfoundries U.s. Inc., Malta, NY (US);
Michel Abou-Khalil, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
Aaron Vallett, Jericho, VT (US);
Sarah McTaggart, Essex Junction, VT (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Semiconductor structures including electrical isolation and methods of forming a semiconductor structure including electrical isolation. The structure includes a semiconductor substrate having a first surface, a recess in the first surface, and a second surface inside the first recess. The structure further includes a shallow trench isolation region extending from the first surface into the semiconductor substrate. The shallow trench isolation region is positioned to surround an active device region including the recess. A field-effect transistor includes a gate electrode positioned on a portion of the second surface.