The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Oct. 18, 2021
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Richard J. Rassel, Essex Junction, VT (US);

Johnatan A Kantarovsky, South Burlington, VT (US);

Zhong-Xiang He, Essex Junction, VT (US);

Mark D. Levy, Williston, VT (US);

Michel J. Abou-Khalil, Essex Junction, VT (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H01L 21/76 (2006.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 62/85 (2025.01); H10D 62/824 (2025.01); H10D 62/854 (2025.01);
U.S. Cl.
CPC ...
H10D 62/113 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10D 62/854 (2025.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor device with a dual isolation structure and methods of manufacture. The structure includes: a dual isolation structure including semiconductor material; and an active device region including a channel material and a gate metal material over the channel material. The channel material is between the dual isolation structure and the gate metal material includes a bottom surface not extending beyond a sidewall of the dual isolation structure.


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