Essex Junction, VT, United States of America

Richard J Rassel

USPTO Granted Patents = 2 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2024-2025

where 'Filed Patents' based on already Granted Patents

2 patents (USPTO):

Title: Innovations of Richard J Rassel

Introduction

Richard J Rassel is a notable inventor based in Essex Junction, Vermont, who has made significant contributions to the field of semiconductor technology. With a total of two patents to his name, Rassel's work focuses on enhancing the performance and efficiency of electronic devices.

Latest Patents

Rassel's latest patents include "High-mobility-electron transistors having heat dissipating structures" and "Integrated circuit structure with through-metal through-substrate interconnect and method." The first patent describes a semiconductor device that incorporates a substrate, a semiconductor layer, and heat dissipating structures designed to improve thermal management. The second patent outlines an integrated circuit structure featuring a through-metal interconnect that enhances connectivity within semiconductor devices.

Career Highlights

Rassel is currently employed at Globalfoundries U.S. Inc., where he continues to innovate in the semiconductor industry. His work has contributed to advancements in high electron mobility transistors and integrated circuit designs, which are crucial for modern electronic applications.

Collaborations

Throughout his career, Rassel has collaborated with esteemed colleagues such as Zhong-Xiang He and Ramsey M Hazbun. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Richard J Rassel's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic devices.

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