The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Jun. 22, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Zhong-Xiang He, Essex Junction, VT (US);

Ramsey Hazbun, Colchester, VT (US);

Rajendran Krishnasamy, Essex Junction, VT (US);

Johnatan Avraham Kantarovsky, South Burlington, VT (US);

Michel Abou-Khalil, Essex Junction, VT (US);

Richard Rassel, Essex Junction, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 21/48 (2006.01); H01L 23/48 (2006.01); H10D 30/47 (2025.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 21/4882 (2013.01); H01L 23/481 (2013.01); H10D 30/47 (2025.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor layer, a device layer, and heat dissipating structures. The semiconductor layer is over the substrate and the device layer is over the semiconductor layer. The device layer includes a first ohmic contact and a second ohmic contact. The heat dissipating structures are at least through the substrate and the semiconductor layer, and between the first ohmic contact and the second ohmic contact.


Find Patent Forward Citations

Loading…