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South Burlington, VT, United States of America

Johnatan A Kantarovsky

USPTO Granted Patents = 31 (Patent Applications = 21)

Average Co-Inventor Count = 4.2

ph-index = 1

Forward Citations = 4(Granted Patents)

Company Filing History:

Globalfoundries U.S. Inc.

Globalfoundries Singapore Pte. Ltd.

Years Active: 2021-2025

where 'Filed Patents' based on already Granted Patents

31 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12417975 - Electrically programmable fuse over crystalline semiconductor materials (2025-09-16),

2. 12416530 - Temperature detection using negative temperature coefficient resistor in GaN setting (2025-09-16),

3. 12400927 - High-mobility-electron transistors having heat dissipating structures (2025-08-26),

4. 12389622 - High electron mobility transistor devices having a silicided polysilicon layer (2025-08-12),

5. 12255235 - Field effect transistors with dual field plates (2025-03-18),

6. 12243935 - High electron mobility transistor devices having a silicided polysilicon layer (2025-03-04),

7. 12183814 - Multi-channel transistor (2024-12-31),

8. 12166476 - High voltage device with linearizing field plate configuration (2024-12-10),

9. 12159910 - Isolation regions for charge collection and removal (2024-12-03),

10. 12154956 - Structure including multi-level field plate and method of forming the structure (2024-11-26),

11. 12119383 - Transistor with multi-level self-aligned gate and source/drain terminals and methods (2024-10-15),

12. 12046633 - Airgap structures in auto-doped region under one or more transistors (2024-07-23),

13. 11923446 - High electron mobility transistor devices having a silicided polysilicon layer (2024-03-05),

14. 11916119 - Transistor with self-aligned gate and self-aligned source/drain terminal(s) and methods (2024-02-27),

15. 11901304 - Integrated circuit structure with fluorescent material, and related methods (2024-02-13),

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