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For the Inventor, By the Inventor

South Burlington, VT, United States of America

Johnatan A Kantarovsky

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This inventor holds 35 USPTO granted patents and 18 published patent applications, primarily in High Electron Mobility Transistors. Top assignees: Globalfoundries U.S. Inc., Globalfoundries Singapore Pte. Ltd.. Active years: 2021-2026.

USPTO Granted Patents = 35 

% Patents Active = 91.4

Average Co-Inventor Count = 4.3

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:

goldMedal34 out of 1,081 
 
Globalfoundries U.S. Inc.
 patents
silverMedal1 out of 1,054 
 
Globalfoundries Singapore Pte. Ltd.
 patents

Years Active: 2021-2026

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Areas of Expertise:
High Electron Mobility Transistors
Airgap Structures
Integrated Circuit Design
Field Effect Transistors
Temperature Detection
Electrical Fuse
Silicided Polysilicon
Charge Collection
Dual Isolation
Multi-Level Gate
Non-Planar Semiconductors
Bipolar Devices
35 patents (USPTO):Explore Patents
1. 12666961 - Heater elements (2026-06-23),
2. 12604735 - Device with airgap structure (2026-04-14),
3. 12581701 - Device with dual isolation structure (2026-03-17),
4. 12550410 - High electron mobility transistors (2026-02-10),
5. 12417975 - Electrically programmable fuse over crystalline semiconductor materials (2025-09-16),
6. 12416530 - Temperature detection using negative temperature coefficient resistor in GaN setting (2025-09-16),
7. 12400927 - High-mobility-electron transistors having heat dissipating structures (2025-08-26),
8. 12389622 - High electron mobility transistor devices having a silicided polysilicon layer (2025-08-12),
9. 12255235 - Field effect transistors with dual field plates (2025-03-18),
10. 12243935 - High electron mobility transistor devices having a silicided polysilicon layer (2025-03-04),
11. 12183814 - Multi-channel transistor (2024-12-31),
12. 12166476 - High voltage device with linearizing field plate configuration (2024-12-10),
13. 12159910 - Isolation regions for charge collection and removal (2024-12-03),
14. 12154956 - Structure including multi-level field plate and method of forming the structure (2024-11-26),
15. 12119383 - Transistor with multi-level self-aligned gate and source/drain terminals and methods (2024-10-15),

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