The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Mar. 25, 2024
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Steven J. Bentley, Menands, NY (US);

Francois Hebert, San Mateo, CA (US);

Lawrence Selvaraj Susai, South Burlington, VT (US);

Johnatan A Kantarovsky, South Burlington, VT (US);

Michael Zierak, Colchester, VT (US);

Mark D. Levy, Williston, VT (US);

John Ellis-Monaghan, Grand Isle, VT (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7783 (2013.01); H01L 29/2003 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to multi-channel transistors and methods of manufacture. The structure includes: a gate structure; a single channel layer in a channel region under the gate structure; a drift region adjacent to the gate structure; and multiple channel layers in the drift region coupled to the single channel layer under the gate structure.


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