Francois Hebert

San Mateo, CA, United States of America

Francois Hebert

Average Co-Inventor Count = 1.6

ph-index = 17

Forward Citations = 1,193(Granted Patents)

DiyaCoin DiyaCoin 3.32 

Inventors with similar research interests:


Location History:

  • Sunnyvale, CA (US) (1994 - 1999)
  • San Mateo, CA (2012)
  • Cheongju-si, KR (2015 - 2020)
  • San Mateo, CA (US) (1998 - 2023)


Years Active: 1994-2025

where 'Filed Patents' based on already Granted Patents

100 patents (USPTO):

Title: Francois Hebert: A Prolific Inventor Revolutionizing Semiconductor Devices

Introduction:

Francois Hebert, a renowned inventor hailing from San Mateo, CA, has made significant contributions to the field of semiconductor devices through his extensive patent portfolio. With an impressive total of 97 patents under his belt, Hebert has consistently pushed the boundaries of innovation and garnered recognition for his groundbreaking work. This article explores some of his latest patents and highlights his notable career achievements.

Latest Patents:

Hebert's recent patents reflect his expertise in the development of semiconductor components, showcasing his proficiency in creating novel designs for bidirectional switches and buried magnetic sensors. In particular, two of his noteworthy inventions are "Bidirectional switches with active substrate biasing" and "Semiconductor device having circuitry positioned above a buried magnetic sensor."

The first patent, "Bidirectional switches with active substrate biasing," describes structures for bidirectional switches and the methods used in their formation. This innovation involves the creation of a substrate contact formed in a trench within the substrate. Additionally, Hebert incorporates a bidirectional switch with a unique configuration featuring source/drain electrodes, an extension region, and a gate structure. This inventive design facilitates enhanced bidirectional switching capabilities.

The second patent, "Semiconductor device having circuitry positioned above a buried magnetic sensor," focuses on a semiconductor device incorporating circuitry, a buried oxide, and a magnetic sensor with a sensing area under the circuitry. Within the sensing area, Hebert skillfully utilizes N-doped and P-doped regions to optimize the performance of the magnetic sensor. Coupled with sensor contacts, these enhancements significantly increase the efficiency and functionality of the device.

Career and Companies:

Throughout his career, Hebert has demonstrated his expertise while working for notable companies such as National Semiconductor Corporation and Cree GmbH. These industry-leading organizations have allowed him to collaborate with talented individuals, including colleagues like Rashid Bashir and Datong Chen. Together, they have contributed to the advancement of semiconductor technology and established a reputation for innovation within the industry.

Conclusion:

Francois Hebert's 97 patents and his recent groundbreaking inventions highlight his significant contributions to the field of semiconductor devices. With his expertise in bidirectional switches and buried magnetic sensors, he has paved the way for advancements in this rapidly evolving industry. As he continues his inventive journey, Francois Hebert is undoubtedly a name to watch for those eager to witness the future of semiconductor technology.

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