The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Jan. 31, 2023
Globalfoundries U.s. Inc., Malta, NY (US);
Francois Hebert, San Mateo, CA (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. The structure comprises a semiconductor substrate including a top surface, a doped region adjacent to the top surface, and a trench that extends through the doped region. The semiconductor substrate comprises a wide bandgap semiconductor material. The structure further comprises a gate structure including a gate conductor layer in the trench, and a dielectric layer on the top surface of the semiconductor substrate. The dielectric layer includes an opening that is aligned with the trench in the semiconductor substrate, and the dielectric layer comprises a material with a melting point that is greater than or equal to 2000° C.