logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10224321 B1

PDFFull Text
Date of Patent:
Mar. 05, 2019

Filed:

Aug. 22, 2016

Semiconductor device with schottky diode and manufacturing method thereof

Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventor:

Francois Hebert, Cheongju-si, KR;

Assignee:

MagnaChip Semiconductor, Ltd., Cheongju-si, KR;

Attorney:

NSIP Law

Primary Examiner:

Robert T Huber

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/07 (2006.01); H01L 29/772 (2006.01); H01L 29/872 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 27/0727 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01); H01L 29/41758 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/4916 (2013.01); H01L 29/772 (2013.01); H01L 29/7827 (2013.01); H01L 29/872 (2013.01);
Abstract

A semiconductor device with an embedded schottky diode and a manufacturing method thereof are provided. A semiconductor device having a schottky diode include: an epilayer of a first conductivity type, a body layer of a second conductivity type, and a source layer of the first conductivity type arranged in that order; a gate trench that extends from the source layer to a part of the epilayer; a body trench formed a predetermined distance from the gate trench and extends from the source layer to a part of the epilayer; and a guard ring of the second conductivity type that contacts an outer wall of the body trench and formed in the epilayer.

Find Patent Forward Citations

Loading…