The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Mar. 29, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Uppili S. Raghunathan, Essex Junction, VT (US);

Vibhor Jain, Williston, VT (US);

Siva P. Adusumilli, South Burlington, VT (US);

Yves T. Ngu, Williston, VT (US);

Johnatan A. Kantarovsky, South Burlington, VT (US);

Sebastian T. Ventrone, South Burlington, VT (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 21/764 (2006.01); H10D 10/80 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/764 (2013.01); H10D 10/821 (2025.01); H10D 62/115 (2025.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to devices with airgap structures and methods of manufacture. The structure includes: a semiconductor substrate with a trap-rich region; one or more airgap structures within the semiconductor substrate; at least one deep trench isolation structure laterally surrounding the one or more airgap structures and extending into the semiconductor substrate; and a device over the one or more airgap structures.


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