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Williston, VT, United States of America

Yves T Ngu

This inventor holds 29 USPTO granted patents and 5 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Globalfoundries U.S. Inc., Globalfoundries Inc., International Business Machines Corporation. Active years: 2011-2026.

USPTO Granted Patents = 29 (Patent Applications = 5)

% Patents Active = 75.9

EPO Patents = 1 (Patent Applications = 4)

Average Co-Inventor Count = 5.1

ph-index = 5

Forward Citations = 90(Granted Patents)

Location History:

Greenbelt, MD (US) (2011)
Essex, VT (US) (2014 - 2017)
Essex Juntion, VT (US) (2022)
Williston, VT (US) (2019 - 2023)
Hinesburg, VT (US) (2023)
Essex Junction, VT (US) (2016 - 2024)
Birchwood Drive Hinesburg, VT (US) (2024)

Company Filing History:

19 out of 1,087

Globalfoundries U.S. Inc.

Globalfoundries Inc.

3 out of 166,325

International Business Machines Corporation

4. 3 out of 2,025

University System of Maryland

National Security Agency

where one patent can have more than one assignee

Years Active: 2011-2026

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Areas of Expertise:

Heater Elements

High Electron Mobility Transistor

Integrated Circuit Structure

Photonic Devices

MEMS Technology

Optical Signal Paths

Polycrystalline Resistor

Electronic Fuse

Bipolar Transistor

Silicon-on-Insulator

Photolithography

Anti-Tamper Packaging

29 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12666961 - Heater elements (2026-06-23),

2. 12604735 - Device with airgap structure (2026-04-14),

3. 12538501 - Structure providing poly-resistor under shallow trench isolation and above high resistivity polysilicon layer (2026-01-27),

4. 12278269 - Bipolar transistor with stepped emitter (2025-04-14),

5. 12243935 - High electron mobility transistor devices having a silicided polysilicon layer (2025-03-04),

6. 12159910 - Isolation regions for charge collection and removal (2024-12-03),

7. 12028053 - Structure including resistor network for back biasing FET stack (2024-07-02),

8. 11923446 - High electron mobility transistor devices having a silicided polysilicon layer (2024-03-05),

9. 11901304 - Integrated circuit structure with fluorescent material, and related methods (2024-02-13),

10. 11664412 - Structure providing poly-resistor under shallow trench isolation and above high resistivity polysilicon layer (2023-05-30),

11. 11637173 - Structure including polycrystalline resistor with dopant-including polycrystalline region thereunder (2023-04-25),

12. 11574867 - Non-planar silicided semiconductor electrical fuse (2023-02-07),

13. 11545577 - Semiconductor structure with in-device high resistivity polycrystalline semiconductor element and method (2023-01-03),

14. 11545549 - Semiconductor structures with body contact regions embedded in polycrystalline semiconductor material (2023-01-03),

15. 11444149 - Polysilicon resistor with continuous u-shaped polysilicon resistor elements and related method (2022-09-13),

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