The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Jan. 22, 2021
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Michael J. Zierak, Colchester, VT (US);
Siva P. Adusumilli, South Burlington, VT (US);
Yves T. Ngu, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
Assignee:
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 21/76224 (2013.01); H01L 27/0629 (2013.01);
Abstract
A structure provides a polysilicon resistor under a shallow trench isolation (STI). The structure includes the STI, a resistor in the form of a doped buried polysilicon layer under the STI, and a high resistivity (HR) polysilicon layer under the doped buried polysilicon layer. The structure also includes a pair of contacts operatively coupled in a spaced manner to the doped buried polysilicon layer. A related method is also disclosed.