The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

Sep. 23, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Steven M. Shank, Jericho, VT (US);

Siva P. Adusumilli, South Burlington, VT (US);

Yves Ngu, Williston, VT (US);

Michael Zierak, Colchester, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 21/763 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 21/763 (2013.01); H01L 27/1203 (2013.01); H01L 29/04 (2013.01);
Abstract

Body-contacted semiconductor structures and methods of forming a body-contacted semiconductor structure. A semiconductor substrate, which contains of a single-crystal semiconductor material, includes a device region and a plurality of body contact regions each comprised of the single-crystal semiconductor material. A polycrystalline layer and polycrystalline regions are formed in the semiconductor substrate. The polycrystalline regions are positioned between the polycrystalline layer and the device region, and the polycrystalline regions have a laterally-spaced arrangement with a gap between each adjacent pair of the polycrystalline regions. One of the plurality of body contact regions is arranged in the gap between each adjacent pair of the polycrystalline regions.


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