The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Feb. 23, 2021
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Siva P. Adusumilli, South Burlington, VT (US);

Steven M. Shank, Jericho, VT (US);

Yves T. Ngu, Essex Junction, VT (US);

Mickey H. Yu, Essex Junction, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 27/1203 (2013.01); H01L 27/0629 (2013.01); H01L 27/0802 (2013.01);
Abstract

A resistor includes at least one polysilicon resistor element in a semiconductor substrate with each polysilicon resistor element having a continuous U-shape with a continuous lateral bottom. The resistor may include an insulator within a valley of the U-shape of each polysilicon resistor element. A plurality of polysilicon resistor elements can be sequentially interconnected to create a serpentine polysilicon resistor. The resistor may also include a dopant-including high resistivity (HR) polysilicon layer thereunder to provide electrical isolation from, and better thermal conduction to, for example, a base semiconductor substrate. The resistor can be used in an SOI substrate. A related method is also disclosed.


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