The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Oct. 17, 2021
Globalfoundries U.s. Inc., Malta, NY (US);
Vibhor Jain, Clifton Park, NY (US);
Johnatan Avraham Kantarovsky, South Burlington, VT (US);
Mark David Levy, Williston, VT (US);
Ephrem Gebreselasie, South Burlington, VT (US);
Yves Ngu, Birchwood Drive Hinesburg, VT (US);
Siva P. Adusumilli, South Burlington, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to high electron mobility transistor (HEMT) devices having a silicided polysilicon layer. The present disclosure may provide an active region above a substrate, source and drain electrodes in contact with the active region, a gate above the active region, the gate being laterally between the source and drain electrodes, a polysilicon layer above the substrate, and a silicide layer on the polysilicon layer. The active region includes at least two material layers with different band gaps. The polysilicon layer may be configured as an electronic fuse, a resistor, or a diode.