The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Dec. 22, 2021
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventor:

Johnatan Avraham Kantarovsky, South Burlington, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/76 (2006.01); H01L 21/765 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/404 (2013.01); H01L 21/7605 (2013.01); H01L 21/765 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01);
Abstract

A transistor structure is provided, the transistor structure comprising a source, a drain, and a gate between the source and the drain. The gate may have a top surface. A first field plate may be between the source and the drain. The first field plate may be L-shaped and having a vertical portion over a horizontal portion. A top surface of the vertical portion of the first field plate may be at least as high as the top surface of the gate. A second field plate, whereby the second field plate may be connected to the gate and the second field plate may partially overlap the horizontal portion of the first field plate.


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