The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Sep. 22, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Johnatan A. Kantarovsky, South Burlington, VT (US);

Santosh Sharma, Austin, TX (US);

Michael J. Zierak, Colchester, VT (US);

Steven J. Bentley, Menands, NY (US);

Ephrem G. Gebreselasie, South Burlington, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 21/76 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 62/852 (2025.01); H10D 84/01 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 21/7605 (2013.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 30/4755 (2025.01); H10D 62/85 (2025.01); H10D 62/8503 (2025.01); H10D 62/852 (2025.01); H10D 84/01 (2025.01);
Abstract

Embodiments of the disclosure provide an electrically programmable fuse (efuse) over crystalline semiconductor material. A structure according to the disclosure includes a plurality of crystalline semiconductor layers. Each crystalline semiconductor layer includes a compound material. A metallic layer is on the plurality of crystalline semiconductor layers. The metallic layer has a lower resistivity than an uppermost layer of the plurality of crystalline semiconductor layers. A pair of gate conductors is on respective portions of the metallic layer. The metallic layer defines an electrically programmable fuse (efuse) link between the gate conductors.


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