Globalfoundries U.S. Inc.

Richard J Rassel

Zhong-Xiang He

Ramsey M Hazbun

Alvin Jose Joseph

Rajendran Krishnasamy

Michel J Abou-Khalil

Mark Levy

Johnatan A Kantarovsky

Jeonghyun Hwang

A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor layer, a device layer, and heat dissipating structures. The semiconductor layer is over the substrate and the device layer is over the semiconductor layer. The device layer includes a first ohmic contact and a second ohmic contact. The heat dissipating structures are at least through the substrate and the semiconductor layer, and between the first ohmic contact and the second ohmic contact.

High-mobility-electron transistors having heat dissipating structures

Disclosed is an integrated circuit (IC) structure that includes a through-metal through-substrate interconnect. The interconnect extends essentially vertically through a device level metallic feature on a frontside of a substrate, extends downward from the device level metallic feature into or completely through the substrate (e.g., to contact a backside metallic feature below), and extends upward from the device level metallic feature through interlayer dielectric (ILD) material (e.g., to contact a BEOL metallic feature above). The device level metallic feature can be, for example, a metallic source/drain region of a transistor, such as a high electron mobility transistor (HEMT) or a metal-insulator-semiconductor high electron mobility transistor (MISHEMT), which is formed on the frontside of the substrate. The backside metallic feature can be a grounded metal layer. The BEOL metallic feature can be a metal wire in one of the BEOL metal levels. Also disclosed is an associated method.

Integrated circuit structure with through-metal through-substrate interconnect and method

Growing community of inventors

Essex Junction, VT, United States of America

Richard J Rassel