The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Mar. 02, 2020
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Siva P. Adusumilli, South Burlington, VT (US);
Anthony K. Stamper, Williston, VT (US);
Michel J. Abou-Khalil, Essex Junction, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Bojidha Babu, South Burlington, VT (US);
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Abstract
Structures including electrical isolation and methods of forming a structure including electrical isolation. A first polycrystalline layer is located in a substrate, and a second polycrystalline layer is positioned between the first polycrystalline layer and a top surface of the substrate. The substrate includes a first portion of the single-crystal semiconductor material that is positioned between the second polycrystalline layer and the top surface of the substrate. The substrate includes a second portion of the single-crystal semiconductor material that is positioned between the first polycrystalline layer and the second polycrystalline layer. The first polycrystalline layer has a thickness. The second polycrystalline layer has a portion with a thickness that is greater than the thickness of the first polycrystalline layer.