The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Aug. 28, 2019
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Michel J. Abou-Khalil, Essex Junction, VT (US);
Aaron Vallett, Jericho, VT (US);
Steven M. Shank, Jericho, VT (US);
Bojidha Babu, South Burlington, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Anthony K. Stamper, Williston, VT (US);
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Abstract
Structures including electrical isolation and methods associated with forming such structures. A semiconductor layer has a top surface, a polycrystalline region, and a single-crystal region between the polycrystalline region and the top surface. An isolation band is located beneath the single-crystal region. The isolation band contains a first concentration of an n-type dopant and a second concentration of a p-type dopant, and a net difference between the first concentration and the second concentration is within a range of about five percent to about fifteen percent.