The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Dec. 07, 2020
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Anthony K. Stamper, Williston, VT (US);
Michel J. Abou-Khalil, Essex Junction, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Randy Wolf, Essex Junction, VT (US);
Alvin J. Joseph, Williston, VT (US);
Aaron Vallett, Jericho, VT (US);
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Abstract
Semiconductor device structures with substrate biasing, methods of forming a semiconductor device structure with substrate biasing, and methods of operating a semiconductor device structure with substrate biasing. A substrate contact is coupled to a portion of a bulk semiconductor substrate in a device region. The substrate contact is configured to be biased with a negative bias voltage. A field-effect transistor includes a semiconductor body in the device region of the bulk semiconductor substrate. The semiconductor body is electrically isolated from the portion of the bulk semiconductor substrate.