The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Nov. 28, 2022
Globalfoundries U.s. Inc., Malta, NY (US);
Megan Lydon-Nuhfer, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
Aaron L. Vallett, Jericho, VT (US);
Michel Abou-Khalil, Essex Junction, VT (US);
Sarah A. Mctaggart, Essex Junction, VT (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
An integrated circuit (IC) structure includes a V-shaped cavity in a semiconductor substrate. A source region and a drain region are on opposing sides of the V-shaped cavity. A gate structure includes a gate dielectric layer, spacers, and a gate electrode on the gate dielectric layer between the spacers. The gate structure is fully within the V-shaped cavity. The IC structure provides a switch that finds advantageous application as part of a low noise amplifier. The IC structure provides a smaller gate width, decreased capacitance, increased gain and increased radio frequency (RF) performance compared to planar devices or devices without the gate structure fully within V-shaped cavity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile