Sarah A Mctaggart

Title: The Innovations of Sarah A. Mctaggart

Introduction

Sarah A. Mctaggart is an accomplished inventor based in Essex Junction, Vermont. She has made significant contributions to the field of semiconductor technology, particularly in the design of bipolar transistors. Her innovative work has led to the development of a unique isolation stack that enhances the performance of these devices.

Latest Patents

Sarah holds a patent for an "Isolation stack for a bipolar transistor and related methods." This patent describes a structure that includes a first isolation layer on a subcollector, with a first air gap positioned between the first isolation layer and the collector of a bipolar transistor. Additionally, the design features a second isolation layer adjacent to the intrinsic base and a third isolation layer vertically positioned between the second isolation layer and the extrinsic base. A second air gap is also included, located below the extrinsic base. This innovative approach aims to improve the efficiency and reliability of bipolar transistors.

Career Highlights

Sarah A. Mctaggart is currently employed at GlobalFoundries U.S. Inc., where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in advancing the capabilities of bipolar transistors, making her a valuable asset to her team and the industry.

Collaborations

Throughout her career, Sarah has collaborated with notable colleagues, including Jacob M. Deangelis and Uppili S. Raghunathan. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

In summary, Sarah A. Mctaggart is a pioneering inventor whose work in semiconductor technology has led to significant advancements in bipolar transistors. Her contributions continue to shape the future of this field, demonstrating her commitment to innovation and excellence.