Globalfoundries U.S. Inc.

Sarah A Mctaggart

Steven M Shank

Cameron E Luce

Uppili S Raghunathan

Megan Elizabeth Lydon-Nuhfer

Jacob M Deangelis

The disclosure provides an isolation stack for a bipolar transistor (BT), and related methods. A structure of the disclosure includes a first isolation layer on a subcollector. A first air gap is between the first isolation layer and a collector of a BT. A second isolation layer is on the first isolation layer and adjacent an intrinsic base of the BT. A third isolation layer is on the second isolation layer, vertically between the second isolation layer and an extrinsic base of the BT. A second air gap is adjacent the third isolation layer and below the extrinsic base.

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Essex Junction, VT, United States of America

Sarah A Mctaggart