The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Nov. 13, 2024
Globalfoundries U.s. Inc., Malta, NY (US);
Jacob M. Deangelis, Essex Junction, VT (US);
Uppili S. Raghunathan, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
Sarah A. Mctaggart, Essex Junction, VT (US);
Megan Elizabeth Lydon-Nuhfer, Essex Junction, VT (US);
Cameron Luce, Colchester, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
The disclosure provides an isolation stack for a bipolar transistor (BT), and related methods. A structure of the disclosure includes a first isolation layer on a subcollector. A first air gap is between the first isolation layer and a collector of a BT. A second isolation layer is on the first isolation layer and adjacent an intrinsic base of the BT. A third isolation layer is on the second isolation layer, vertically between the second isolation layer and an extrinsic base of the BT. A second air gap is adjacent the third isolation layer and below the extrinsic base.