The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Jan. 10, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Ramsey Hazbun, Colchester, VT (US);

Mark Levy, Williston, VT (US);

Alvin Joseph, Williston, VT (US);

Siva P. Adusumilli, South Burlington, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 62/85 (2025.01); H10D 84/82 (2025.01);
U.S. Cl.
CPC ...
H01L 21/0243 (2013.01); H01L 21/02381 (2013.01); H01L 21/76224 (2013.01); H10D 30/015 (2025.01); H10D 62/8503 (2025.01); H10D 84/82 (2025.01); H01L 21/02433 (2013.01);
Abstract

Structures including a compound-semiconductor-based device and a silicon-based device integrated on a semiconductor substrate and methods of forming such structures. The structure includes a first semiconductor layer having a top surface and a faceted surface that fully surrounds the top surface. The top surface has a first surface normal, and the faceted surface has a second surface normal that is inclined relative to the first surface normal. A layer stack that includes second semiconductor layers is positioned on the faceted surface of the first semiconductor layer. Each of the second semiconductor layers contains a compound semiconductor material. A silicon-based device is located on the top surface of the first semiconductor layer, and a compound-semiconductor-based device is located on the layer stack.


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