The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Jun. 21, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Bartlomiej J. Pawlak, Leuven, BE;
Ramsey M. Hazbun, Colchester, VT (US);
Siva P. Adusumilli, South Burlington, VT (US);
Mark D. Levy, Williston, VT (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B01L 3/00 (2006.01); G01N 27/414 (2006.01);
U.S. Cl.
CPC ...
B01L 3/502715 (2013.01); B01L 3/502707 (2013.01); G01N 27/414 (2013.01); B01L 2200/12 (2013.01);
Abstract
Disclosed is a semiconductor structure including a monocrystalline silicon layer having a first surface and a second surface opposite the first surface. A cavity extends into the first semiconductor layer at the second surface. The structure also includes a polycrystalline silicon layer adjacent to the second surface and extending over the cavity. At least one opening extends through the second semiconductor layer to the cavity.