The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Jul. 06, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Ramsey Hazbun, Colchester, VT (US);

Siva P. Adusumilli, South Burlington, VT (US);

Mark Levy, Williston, VT (US);

Bartlomiej Jan Pawlak, Leuven, BE;

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B01L 3/00 (2006.01); B81B 1/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B01L 3/50273 (2013.01); B81B 1/002 (2013.01); B81C 1/00071 (2013.01); B01L 2300/0645 (2013.01); B01L 2300/12 (2013.01); B01L 2400/0424 (2013.01); B81B 2201/05 (2013.01); B81B 2203/0338 (2013.01);
Abstract

Structures for a microfluidic channel and methods of forming a structure for a microfluidic channel. The structure comprises a semiconductor substrate including a trench and a layer stack on the semiconductor substrate. The layer stack includes a first layer, a second layer between the first layer and the semiconductor substrate, and an opening penetrating through the first layer and the second layer to the trench. The structure further comprises a third layer inside the opening in the layer stack. The third layer, which comprises a semiconductor material, obstructs the opening to define a cavity inside the trench.


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