The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Apr. 04, 2024
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Uppili Srinivasan Raghunathan, Essex Junction, VT (US);

Steven M. Shank, Jericho, VT (US);

Sarah Ann McTaggart, Essex Junction, VT (US);

Megan Elizabeth Lydon-Nuhfer, Essex Junction, VT (US);

Cameron Ezera Luce, Colchester, VT (US);

Ramsey Hazbun, Colchester, VT (US);

Alexander M. Derrickson, Saratoga Springs, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 10/80 (2025.01); H10D 10/01 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 10/821 (2025.01); H10D 10/021 (2025.01); H10D 62/177 (2025.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor and methods of manufacture. The structure includes: a collector region; an extrinsic base comprising an emitter opening with an angled sidewall; an emitter within the emitter opening; and an intrinsic base between the emitter and the collector.


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