The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jul. 25, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Shesh Mani Pandey, Saratoga Springs, NY (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/65 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 30/658 (2025.01); H10D 30/0289 (2025.01); H10D 62/116 (2025.01); H10D 62/393 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to laterally-diffused metal-oxide semiconductors and methods of manufacture. The structure includes: a drift region within a semiconductor substrate; a shallow trench isolation structure extending within the drift region; and a gate structure over the semiconductor substrate and extending within the shallow trench isolation structure.