The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Sep. 27, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Shesh Mani Pandey, Saratoga Springs, NY (US);

Rajendran Krishnasamy, Essex Junction, VT (US);

Judson R. Holt, Ballston Lake, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H10D 30/69 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76264 (2013.01); H10D 30/795 (2025.01);
Abstract

A transistor is provided. The transistor includes a substrate, a gate structure, a semiconductor structure, and a dielectric component. The gate structure is over the substrate and the semiconductor structure is adjacent to the gate structure. The semiconductor structure has a first side facing the gate structure and a second side laterally opposite the first side. The dielectric component is in the substrate. The dielectric component has a first portion adjacent to the second side of the semiconductor structure and a second portion under the first portion, wherein the second portion extends under the gate structure.


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